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| (R) DA108S1 DA112S1 DIODE ARRAY Application Specific Discretes A.S.D.TM APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. SO8 FUNCTIONAL DIAGRAM : DA108S1 FEATURES ARRAY OF 8 OR 12 DIODES LOW INPUT CAPACITANCE SUITABLE FOR DIGITAL LINE PROTECTION I/O 1 1 I/O 2 2 I/O 3 3 8 REF 1 7 REF 1 6 REF 2 5 REF 2 DESCRIPTION ARRAY of 8 or 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. I/O 4 4 FUNCTIONAL DIAGRAM : DA112S1 COMPLIES WITH FOLLOWING STANDARDS : IEC1000-4-22level 4: 15kV (air discharge) 8kV (contact discharge) I/O 1 1 I/O 2 2 I/O 3 3 I/O 4 4 8 REF 1 7 I/O 6 6 REF 2 5 I/O 5 March 1998 - Ed:4 1/5 DA108S1 / DA112S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol VRRM IPP P Tstg Tj TL Parameter Repetitivepeak reverse voltage(forone single diode) Repetitive peak forward current * Power dissipation Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s. 8/20 s Value 18 12 0.73 - 55 to + 150 150 260 Unit V A W C C * The surge is repeated after the device returns to ambient temperature THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VFP VF IR Peak forward voltage Forward voltage Reverse leakage current Parameter IPP = 12A, 8/20 s IF = 50 mA VR = 15V DA108S1 DA112S1 Max. 9 12 1.2 2 Unit V V A 2/5 (R) DA108S1 / DA112S1 Fig.1 : Input capacitance VCC connected between REF1 and REF2 Input applied : DC bias + 950 mV(RMS) at 1 MHZ 36 C (pF) 34 32 Typical values V =5V CC V = 15 V CC REF2 30 28 I/O 26 VCC REF1 G 24 22 0 2 4 6 8 10 12 14 16 DC bias (V) Fig.2 : Typical peak forward voltage characteristics (8/20s pulse) VF (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Typical values VF (V) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Tj = 25 o C Typical values Tj = 25 o C 0.001 0.01 I F (A) 0.1 1 0.0 1 I F (A) 10 20 3/5 (R) DA108S1 / DA112S1 APPLICATION 1 : ISDN Interface Protection Residual lightning surges at transformer secondary are suppressed by DA108S1 APPLICATION 2 : Microcontroller I/O port protection Vcc Vcc 4-6 bit input port I/O Vcc I/O Vcc c I/O Vcc I/O DA1xx S1 IMPORTANT : DA108S1 must imperatively be connected to the reference voltages by REF1 and REF2. 4/5 (R) DA108S1 / DA112S1 ORDER CODE DA1 Diode ARRAY Number of diodes Serial MARKING : Logo, Data Code, DA108S1 DA112S1 DA108S DA112S 08 S 1 RL RL : Tape and reel : tubes Package : SO8 plastic PACKAGE MECHANICAL DATA SO8 (Plastic) DIMENSIONS REF. A a1 a2 b b1 C c1 D E e e3 F L M S Packaging: Preferencepackaging is tape and reel. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. Millimetres Inches Min. Typ. Max. Min. Typ. Max. 1.75 0.1 0.35 0.19 0.50 45 (typ) 4.8 5.8 1.27 3.81 3.8 0.4 4.0 0.15 1.27 0.016 0.6 8 (max) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 0.069 0.010 0.065 0.019 0.010 (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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